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| MITSUBISHI SEMICONDUCTOR MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 3.20.8 2.00.15 OUTLINE 20.40.2 1 1 2.00.15 FEATURES Push-pull configuration High output power Pout = 60W (TYP.) @ f=1.9 - 2.0 GHz High power gain GLP = 11.5 dB (TYP.) @ f=1.9 - 2.0GHz High power added efficiency P.A.E. = 45 % (TYP.) @ f=1.9 - 2.0GHz 17.40.3 8.00.2 2 3.20.8 3 6.0 3 15.2 24.00.3 16.4 1.9 QUALITY GRADE IG 3.50.4 1 2 3 gate source drain GF-47 RECOMMENDED BIAS CONDITIONS VDS = 12 (V) ID = 4.0 (A) RG=20 (ohm) for each gate unit : mm ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO PT *1 Tch Tstg Parameter Gate to drain voltage Gate to source voltage Total power dissipation Channel temperature Storage temperature (Ta=25deg.C) Ratings -20 -10 107.1 175 -65 / +175 Unit V V W deg.C deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol VGS(off) P2dB GLP ID(RF) P.A.E. Rth (ch-c) Parameter Saturated drain current Output power at 2dB gain compression Linear power gain Drain current Power added efficiency Thermal resistance (Ta=25deg.C) Test conditions Min. VDS = 3V , ID = 17.3mA -1 47 VDS=12V, ID(RF off)=4.0A, f=1.9 - 2.0GHz 10 Channel to Case Limits Typ. Max. 48 11.5 11 45 1.0 -4 15 1.4 Unit V dBm dB A % deg.C/W 0.1 1.9-2.0GHz band power amplifier 2.40.2 APPLICATION MITSUBISHI ELECTRIC 15.2 Jul-'05 MGFL48V1920 OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER TEST CONDITIONS : Ids(RFoff)=4A 50 45 OUTPUT POWER(dBm) 40 35 30 Vds=12V Vds=10V f=1.9GHz 80 70 OUTPUT POWER(dBm) 60 50 40 POWER ADDED EFFICIENCY(%) 50 Vds=12V 45 40 35 30 Vds=10V f=2.0GHz 80 70 60 50 40 POWER ADDED EFFICIENCY(%) Jul-'05 Pout Pout PAE 25 20 15 10 10 15 20 25 30 35 INPUT POWER(dBm) 40 45 30 20 10 0 PAE 25 20 15 10 10 15 20 25 30 35 INPUT POWER(dBm) 40 45 30 20 10 0 MITSUBISHI ELECTRIC CORPORATION MGFL48V1920 IMD vs. OUTPUT POWER TEST CONDITIONS : VDS=12V,ID(RF off)=4.0A 2-tone test , f=5MHz -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 26 28 30 f=1.9GHz IM3 IM5 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 26 28 30 f=2.0GHz IM3 IMD(dBc) IMD(dBc) IM5 32 34 36 38 40 42 44 32 34 36 38 40 42 44 OUTPUT POWER(2tone)(dBm) OUTPUT POWER(2tone)(dBm) MITSUBISHI ELECTRIC CORPORATION Jul-'05 MGFL48V1920 TEST CIRCUIT VG C6 C7 R1 C10 C14 C16 C18 C20 VD R3 C2 1 INPUT C1 C2 C3 C4 C5 C12 C13 C23 C24 C25 C26 C27 C28 OUTPUT C2 2 C8 C9 C11 R2 C15 C17 C19 C21 R4 VG VD C1 ,C2 ,C3 ,C4 :8 p F(G R7 0 8 ) C5 :0 .5 p F(G R4 0 ) C7 ,C8 :4 7 0 0 p F(G R4 0 ) C6 ,C9 ,C1 6 ,C1 7 ,C1 8 ,C1 9 ,C2 0 ,C2 1 :4 .7 u F(CM 3 2 ) C1 0 ,C1 1 ,C1 4 ,C1 5 :2 0 p F(G R4 0 ) C1 2 :1 .5 p F(G R4 0 ) C1 3 :2 p F(G R1 1 0 ) C2 1 ,C2 2 :1 0 0 0 p F(G R4 0 ) C2 3 ,C2 4 ,C2 5 ,C2 6 ,C2 7 ,C2 8 :1 3 p F(G R7 0 8 ) R1 ,R2 = 2 0 o h m R3 ,R4 = 5 1 o h m B o a rd m a te ri a l :T e fl o n T h ickn e ss=0 .6 (m m ) S p e ci fi c d ie le ctric co n sta n t=2 .6 MITSUBISHI ELECTRIC CORPORATION Jul-'05 MGFL48V1920 TEST CONDITIONS : f=1.5-2.5GHz,VDS=12V,ID=2.0A S11,S22 Smith Chart Z=50 1.0 2.0 4.0 3.0 0.2 5.0 2.0 1.0 0.0 0.2 0.5 1.0 2.0 5.0 0.01 -0.2 -5.0 0.02 0.03 0.04 0.05 -0.5 -1.0 -2.0 S PARAMETERS (Ta=25deg.C,VDS=12V,ID=2.0A) S Parameters (TYP.) S11 S21 S12 f (GHz) 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 Mag. 0.889 0.879 0.869 0.854 0.843 0.829 0.814 0.800 0.782 0.761 0.741 0.722 0.705 0.697 0.707 0.730 0.769 0.811 0.847 0.875 0.895 Ang(deg.) 160.2 159.5 158.7 158.2 157.6 157.2 156.6 156.3 155.8 155.9 156.1 157.0 158.5 160.7 163.6 165.5 166.6 165.6 164.3 162.3 160.1 Mag. 1.056 1.101 1.147 1.197 1.253 1.310 1.379 1.451 1.529 1.617 1.710 1.813 1.909 1.977 2.005 1.971 1.873 1.725 1.560 1.395 1.246 Ang(deg.) -28.4 -35.3 -42.4 -49.6 -57.1 -64.9 -73.0 -81.6 -90.6 -100.0 -110.3 -121.5 -133.8 -147.2 -161.9 -176.8 168.3 154.3 141.6 130.6 120.8 Mag. 0.012 0.012 0.013 0.014 0.015 0.016 0.017 0.019 0.019 0.019 0.020 0.022 0.022 0.022 0.022 0.022 0.020 0.019 0.016 0.015 0.013 Ang(deg.) -31.0 -38.3 -40.8 -48.0 -50.4 -65.6 -67.8 -79.1 -88.1 -98.3 -108.0 -121.7 -136.4 -150.5 -153.5 176.6 161.0 148.0 132.7 118.7 105.3 Mag. 0.830 0.837 0.840 0.846 0.854 0.862 0.870 0.878 0.881 0.877 0.873 0.858 0.827 0.782 0.732 0.673 0.635 0.624 0.635 0.661 0.687 SCALE FOR |S12| SCALE FOR |S21| S11 S22 S21,S12 Polar Chart 5.0 S21 S12 S22 Ang(deg.) 169.7 169.6 169.5 169.4 169.2 168.6 167.7 166.8 165.3 163.8 161.9 159.8 157.7 156.1 156.0 157.4 161.2 166.0 170.3 173.3 175.2 This S-Parameter data show measurements performed on each single-ended FET. MITSUBISHI ELECTRIC CORPORATION Jul-'05 MITSUBISHI SEMICONDUCTOR MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET MITSUBISHI Jul-'05 |
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